Embedded phase-change memory and method of fabricating the same

ABSTRACT

An embedded memory required for a high performance, multifunction SOC, and a method of fabricating the same are provided. The memory includes a bipolar transistor, a phase-change memory device and a MOS transistor, adjacent and electrically connected, on a substrate. The bipolar transistor includes a base composed of SiGe disposed on a collector. The phase-change memory device has a phase-change material layer which is changed from an amorphous state to a crystalline state by a current, and a heating layer composed of SiGe that contacts the lower surface of the phase-change material layer.

CROSS-REFERENCE TO RELATED PATENT APPLICATION

This application claims the benefit of Korean Patent Application No.10-2005-0120101, filed on Dec. 8, 2005, and 10-2006-0038331, filed onApr. 27, 2006 in the Korean Intellectual Property Office, the disclosureof which is incorporated herein in its entirety by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to an embedded phase-change memory and amethod of fabricating the same, and more particularly, to an embeddedphase-change memory that carries out a memory function within a SystemOn Chip (SOC), and a method of fabricating the same.

2. Description of the Related Art

Phase-change memories are non-volatile memories which maintain storedinformation even without a power supply. The phase-change memoryincludes a phase-change material whose electrical resistance changesdepending on its crystalline structure. The phase-change materialgenerally consists of elements of Groups VIA through IVA on the periodictable. Because the crystalline structure and electrical resistanceremain regardless of the supply of electrical power, this memory isnon-volatile.

The phase change which results in a difference of electrical resistanceis caused by an electric current. The resistance is high when thecrystalline structure of the phase-change material is amorphous, and lowwhen the structure is crystalline. The difference between the two statesis at least 100-fold. The phase change from the amorphous state to thecrystalline state is referred to as “Set,” and the phase change from thecrystalline state to the amorphous state is referred to as “Reset.” Theelectrical input can both “Set” and “Reset,” allowing the phase changematerial to be used in non-volatile memory.

Ge₂Sb₂Te₅(GST) is a common phase-change material. When a current pulseflows through GST under the amorphous state for a certain time period,the temperature of the GST is raised to over its crystallizationtemperature, thereby changing the state of the GST into the crystallinestate (“Set”). By applying a current pulse to the GST under thecrystalline state, the temperature of the GST is raised to over itsmelting point, so that the GST is in a liquid state. When the current isstopped, the amorphous crystalline structure of the liquid state remains(“Reset”).

To “Reset,” the phase-change material has to be melted and the amorphousstate kept by quenching, so a high current pulse has to be applied for ashort time, compared with the case of “Set.” Generally, a unitphase-change memory device includes a phase-change material and aheating layer. Because the phase-change material alone cannot generatesufficient heat to cause the phase change, the heating layer is composedof a material with a high electrical resistance and contacts thephase-change material, to promote the heat generation.

Conventional phase-change memory is fabricated using CMOS technology. Aunit cell consists of a single phase-change memory device and a singlecell transistor. Current pulses are applied through a bit line, and acell transistor is turned on when a voltage higher than its thresholdvoltage is supplied to a word line. By turning on the cell transistor,the phase-change memory device is connected to the bit line throughwhich the current pulses are supplied. The current pulses supplied atthis time perform “Set” and “Reset” of the phase-change memory device.

Since a high “Reset” current is needed, the cell transistor must be abipolar transistor or a MOS transistor with a significantly wide gate. Avertical-structured pnp-type bipolar transistor can secure a high powerdensity with a cell size of only 5F²˜8F², but is not often used due todifficulty in processing. Accordingly, most cell transistors are MOStransistors.

In order to drive the phase-change memory device using the MOStransistor, the gate width has to be sufficient. Because such a MOStransistor occupies a large area on a silicon substrate, currentresearch is directed toward decreasing the reset current to reduce thegate width, thereby improving integration.

Memories are classified into stand-alone memory and embedded memory.Embedded memory is differentiated from stand-alone memory byincorporating logic to perform its function within a single chip, and isone component of a System-On-Chip (SOC). By directly connecting amicroprocessor to an embedded memory within an SOC, bandwidth can beincreased while decreasing power consumption.

As silicon semiconductor processing techniques have developed, thefunctions embodied by SOCs have widened into diverse fields such asmobile communications and multimedia. The demand for chips for graphics,audio and video applications is increasing greatly. Therefore, moreinformation must be processed in the SOC than ever before, and thus therole of embedded memory in the SOC is becoming more and more important.Increasingly high performance of embedded memory will be needed as SOCsbecome more complicated.

DRAM, SRAM, and FeRAM (Ferroelectric Random Access Memory) may beconsidered for a unit cell of the embedded memory. However, DRAM andSRAM are volatile, losing stored information when power is turned off,and FeRAM needs fastidious fabrication for a reliable device.Accordingly, an embedded memory is needed for embodying high performanceand multiple functions.

SUMMARY OF THE INVENTION

The present invention provides an embedded memory required for a highperformance, multifunction System On Chip (SOC).

The present invention also provides a method of fabricating the embeddedmemory.

According to an aspect of the present invention, there is provided anembedded phase-change memory including a bipolar transistor, aphase-change memory device and a MOS transistor, which are adjacent andelectrically connected to one another, on a substrate. The bipolartransistor includes a base composed of SiGe disposed on a collector.

The phase-change memory device may include a phase-change material layerchanged from an amorphous state to a crystalline state by a current.Also, a heating layer composed of SiGe contacting the lower surface ofthe phase-change material layer may be included.

According to another aspect of the present invention, there is provideda method of fabricating an embedded phase-change memory, includingforming a collector and a collector connection layer of a bipolartransistor, and a well of a MOS transistor, in a substrate. Afterforming an insulating layer on the substrate between the bipolartransistor and the MOS transistor, a gate insulating layer is formed onthe collector, the collector connection layer, and the well. A gateelectrode is formed on the gate insulating layer over the well to formthe MOS transistor. Then, the gate insulating layer on the collector andthe collector connection layer is removed, and a base composed of SiGeis formed on the collector where the gate insulating layer was removed.Thereafter, an emitter electrode is formed on the base, and a collectorelectrode is formed on the collector connection layer to form thebipolar transistor.

At the same time as forming the base composed of SiGe, a heating layercomposed of SiGe may be formed on the insulating layer. Also, thephase-change material layer may contact the heating layer to form thephase-change memory device.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other features and advantages of the present inventionwill become more apparent by describing in detail exemplary embodimentsthereof with reference to the attached drawings in which:

FIG. 1 is a block diagram of an SOC which uses an embedded memoryaccording to the present invention;

FIGS. 2A through 2F are sectional views illustrating a method offabricating the embedded memory according to a first embodiment of thepresent invention; and

FIG. 3 is a sectional view illustrating a method of fabricating theembedded memory according to a second embodiment of the presentinvention.

DETAILED DESCRIPTION OF THE INVENTION

The present invention will now be described more fully with reference tothe accompanying drawings, in which exemplary embodiments of theinvention are shown. The invention may, however, be embodied in manydifferent forms, and should not be construed as being limited to theembodiments set forth herein; rather, these embodiments are provided sothat this disclosure will be thorough and complete, and will fullyconvey the concept of the invention to those skilled in the art. Likereference numerals denote like elements throughout the embodiments.

Embodiments of the present invention provide an embedded memoryspecifically, the embedded memory according to the present inventionallows for fabricating a SiGe HBT, a CMOS transistor and a phase-changememory device at one time. Therefore, the embedded memory according tothe present invention will be described as having an HBT region, a CMOStransistor region and a phase-change memory region.

FIG. 1 is a block diagram of an SOC which uses an embedded memoryaccording to the present invention.

Referring to FIG. 1, an SOC 10 includes a digital circuit 14, an analogcircuit 16, a Radio Frequency (RF) circuit 18 and a memory 20, arrangedon a substrate 12. Different active components may be suitable for therespective portions of the SOC 10. For example, a CMOS transistor withlow power dissipation and fast switching speed is suitable for thedigital circuit 14 and the memory 20, whereas a bipolar transistor withexcellent frequency response is suitable for the analog circuit 16 andthe RF circuit 18. The SOC 10is best fabricated using a BiCMOStechnique, by designing the digital circuit 14 and the memory 20 usingCMOS transistors and the analog circuit 16 and the RF circuit 18 usingbipolar transistors. However, the BiCMOS technique is expensive andcomplicated. Accordingly, current research is attempting to improve thehigh frequency characteristics of the CMOS transistor, to allow its usein the analog circuit 16 and the RF circuit 18.

While embedded memory using DRAM, SRAM, FeRAM, etc. as a unit cell isbeing developed, these have the difficulties of volatile characteristicsand processing as described above. Therefore, these options may not keeppace with the swift development of the SOC. On the other hand,phase-change memory, with its non-volatile characteristics andrelatively simple fabrication process, can be easily used in the SOC.The embodiments of the present invention suggest that an SOC that usesphase-change memory is technically superior to one using DRAM, SRAM,FeRAM, etc. as a unit cell of the embedded memory, based on the BiCMOStechnique. Particularly, the SiGe BiCMOS technique is easily compatiblewith the conventional CMOS technique.

The SiGe BiCMOS technique is to form a SiGe HBT using an epitaxial layeradded with germanium (Ge) to Si as a base, simultaneously with a CMOStransistor. Since the energy band gap of Ge is roughly 0.4 eV less thanSi, a band gap difference occurs in an emitter-base junction when Ge isadded to the base of the bipolar transistor, thereby increasing thecurrent gain. Because a base dopant density can be increased whiledecreasing the current gain, the bipolar transistor can be made tooperate in the RF frequency region by thinning the base.

In order to embody the RF circuit, SiGe or a III-V group based compoundsemiconductor, e.g. GaAs, whose internal mobility of charges is higherthan that of Si, is used to form a bipolar transistor with an excellentfrequency response. The SiGe BiCMOS technique can employ theconventional Si semiconductor process, unlike other compoundsemiconductors in view of the fabricating process. Furthermore, the SiGeBiCMOS technique to fabricate the embedded phase-change memory has thefollowing advantages.

First, a bipolar cell transistor can be used to drive the phase-changememory device. Accordingly, a phase-change memory device with a highReset current can be used in the embedded memory. As stated above, whenthe MOS transistor is employed as the cell transistor of thephase-change memory device, the gate width must be increased. This isbecause the Reset current of the phase-change memory is notsatisfactorily small. For example, when the Reset current is 5 mA, anNMOS transistor with a width of about 15 μm or greater is required. Inorder to decrease the gate width, the Reset current must be reduced. Amethod of reducing the gate width is to develop a new technique ofimproving the characteristics of a phase-change material or adoptinganother memory structure. However, by using a SiGe HBT cell transistor,this difficulty can be solved. Meanwhile, the CMOS transistor may beused to form a peripheral driving circuit, e.g. a sense amplifier.

Second, the SiGe layer is used as a heating layer, greatly decreasingthe reset current. The phase-change memory device hardly reaches itsmelting temperature by the inherent heat generation of the phase-changematerial caused by an input current. Therefore, a sufficient resetenergy is obtained by allowing the heating layer to contact thephase-change material. That is, the heating layer is used to decreasethe reset current. An effective heating layer generally has thecharacteristics of high electrical resistivity, low thermal conductivityand low specific heat. Since SiGe has lower thermal conductivity. andthe specific heat than TiN, which is currently used as a heating layer,the reset current can be lower than in the conventional device usingTiN. Also, because the electrical resistivity of the SiGe layer is ininverse proportion to its doping density, the electrical characteristicsof the heating layer can be adjusted by varying the doping density.

Third, the SiGe BiCMOS technique can produce an RF circuit with betterRF characteristics than the conventional CMOS technique. For example,the cutoff frequency (ft) of a SiGe HBT, that represents the RFcharacteristic value of the device, reaches roughly 300 GHz at present,and approaches that of GaAs HBTs that are used for wirelesscommunication devices such as a Low Noise Amplifier (LNA), a PowerAmplifier (PA) and a mixer.

Because the bipolar transistor needs many fabrication steps which areexpensive and technically demanding, the BiCMOS technique is notcommercially and widely available. Despite this disadvantage, the BiCMOStechnique is suitable for combining circuits having variouscharacteristics within a single chip. Thus, the BiCMOS technique allowsvarious functions of the SOC.

First Embodiment

FIGS. 2A through 2F are sectional views illustrating a method offabricating the embedded memory according to a first embodiment of thepresent invention. In this case, for convenience of description, theembedded memory is divided into an HBT region where a bipolar transistorwill be formed, a phase-change memory region where a phase-change memorydevice will be formed, and a CMOS TR region where a CMOS transistor willbe formed.

Referring to FIG. 2A, an HBT buried layer 102, a collector 104, and acollector connection layer 106 are formed on a semiconductor substrate100 of the bipolar transistor (HBT) region, using photolithography, ionimplantation, epitaxial growth and thermal treatment. In the CMOS TRregion, a CMOS TR buried layer 110 and a well 112 are formed. Thephase-change memory region where the phase-change memory device will belater formed outside the HBT region and the CMOS TR region. Thecollector 104 and the collector connection layer 106, and the collectorconnection layer 106 and the well 112, are isolated from each other byan insulating layer 120 such as a thermal oxidation layer. Also, exposedsurfaces of the collector 104, the collector connection layer 106 andthe well 112 are covered with a gate insulating layer 122.

Referring to FIG. 2B, a first conductive layer (not shown), e.g.polysilicon, is deposited on the gate insulating layer 122, and is thenpatterned by a well known method, thereby forming a gate electrode 116over the well 112 of the CMOS TR region. Thereafter, using the gateelectrode 116 as a mask, the well 112 is ion implanted to form a LightlyDoped Drain (LDD) 115. A low temperature oxide layer deposited by CVD isdry etched to form a gate electrode sidewall 118, and source-drainregions 114 are formed by ion implantation and thermal treatment. Bydoing so, the CMOS transistor prior to performing metal processing iscompleted in the CMOS TR region. Then, the gate insulating layer 122 ofthe HBT region is partially removed using photolithography and dry orwet etching, thereby exposing the collector 104 and the collectorconnection layer 106.

Referring to FIG. 2C, a SiGe layer 124 is deposited to a uniformthickness of 50˜200 nm on the embedded memory where the gate insulatinglayer 122 was partially removed, using CVD or Molecular Beam Epitaxy(MBE). In this case, the Ge density within the SiGe layer 124 has anoptional value greater than 0% and less than 100%, which may be adjustedin accordance with location. For example, the SiGe layer 124 becomes aP-type conductor by doping boron during the deposition, thereby actingas a base in the SiGe HBT and the heating layer 150 of FIG. 2D in thephase-change memory device. The conductivity type and density of theSiGe layer acting as the heating layer may be varied as needed by ionimplantation later.

Referring to FIG. 2D, by patterning the SiGe layer 124, the base 130 isleft on the HBT region and the heating layer 150 is left on thephase-change memory device region. Thereafter, a low temperature oxidelayer 126 is deposited on the embedded memory having the base 130 andthe heating layer 150, using CVD. In this case, the low temperatureoxide layer 126 covers the base 130, the heating layer 150 and the CMOSTR region. The low temperature oxide layer 126 is partially removed byphotolithography and dry etching to expose a region 132 where emitterand collector electrodes will be formed.

It is not essential to use the SiGe layer as the heating layer 150 ofthe phase-change memory device. That is, another SiGe layer formed afterforming the SiGe HBT and the CMOS TR may be used as the heating layer150. The heating layer 150 is not restricted to SiGe, but may becomposed of at least one of W, Ti, TiW, TiN, TiAIN, Ta and a combinationof these materials.

Referring to FIG. 2E, a dopant is simultaneously included when a secondconductive layer (not shown), e.g. polysilicon, is deposited. Otherwise,after the deposition, ion implantation is performed to form a conductor.Then, the second conductive layer is partially removed byphotolithography and dry etching to form an emitter electrode 134 and acollector electrode 136. The low temperature oxide layer 126 is removedby dry etching. Thereafter, boron or BF₂ may be implanted into the base130 to form an extrinsic base (not shown).

Subsequently, a low temperature oxide layer is deposited by CVD, andsidewalls 142 of the emitter electrode 134 and the collector electrode136, and a layer 152 that shields the SiGe heating layer 150 are formedusing photolithography and dry etching. A silicide layer 140 with a lowelectrical resistance is formed on the upper surfaces of the exposedemitter electrode 134, the base 130 and the collector electrode 136 byself-alignment. In this case, because the SiGe heating layer 150 iscovered with the protection layer 152, the silicide layer is not formedthereon. Meanwhile, when thermal treatment is performed to form thesilicide layer 140, the dopant within the emitter electrode 134 diffusesinto the base 130, thereby forming an emitter (not shown).

Referring to FIG. 2F, an insulating layer 144 is deposited on the entiresurface of the embedded memory, and patterned to form a contact hole 154that partially exposes the SiGe heating layer 150. Then, a phase-changematerial layer (not shown) is deposited by a process such as sputtering,CVD with excellent step coverage, or Atomic Layer Deposition (ALD). Thephase-change material layer is patterned to form a phase-change materialpattern 156. The phase-change material pattern 156 may be composed of achalcogen compound such as Ge₂Sb₂Te₅(GST) and SbSe including chalcogenelements such as S, Se and Te.

Even though it is not illustrated, the SiGe HBT, the CMOS transistor andthe phase-change memory device formed on the semiconductor substrate 100can be electrically connected by back-end processing that forms acontact, a metal layer and a pad.

Second Embodiment

FIG. 3 is a sectional view illustrating a method of fabricating theembedded memory according to a second embodiment of the presentinvention. In this case, the structure and manufacture of the HBT regionand the CMOS TR region, but not the phase-change memory region, areidentical to those of the first embodiment described with reference toFIGS. 2A through 2F.

Referring to FIG. 3, the phase-change memory region includes a buriedlayer 202 and a well 204 sequentially formed for a phase-change memorydevice. The well 204 has a surface exposed by an insulating layer 206,and a heating layer 208 covers the exposed surface of the well 204 and aportion of the insulating layer 206. The heating layer 208 is coveredwith a protection layer 210, and the protection layer 210 is partiallyremoved to allow a phase-change material pattern 156 to contact theheating layer 208.

In the embedded memory and the method of fabricating the same accordingto the present invention, a bipolar transistor including a base composedof SiGe is used as a cell transistor, thereby providing the embeddedmemory required for a high performance, multifunction SOC. Also, a MOStransistor, a phase-change memory device and a bipolar transistor arefabricated using BiCMOS processing, thereby attaining RF characteristicsequal to those used for wireless communication. Furthermore, since aheating layer of the phase-change memory device is composed of SiGe, thereset current can be decreased.

While the present invention has been particularly shown and describedwith reference to exemplary embodiments thereof, it will be understoodby those of ordinary skill in the art that various changes in form anddetail may be made therein without departing from the spirit and scopeof the present invention as defined by the following claims.

1. An embedded phase-change memory comprising: a bipolar transistor, aphase-change memory device and a MOS transistor, adjacent andelectrically connected to one another on a substrate, wherein thebipolar transistor comprises a base composed of SiGe disposed on acollector.
 2. The embedded phase-change memory of claim 1, wherein thebase has a thickness of 50˜200 nm.
 3. The embedded phase-change memoryof claim 1, wherein the phase-change memory device comprises: aphase-change material layer which is changed reversibly between anamorphous state and a crystalline state by a current; and a heatinglayer composed of SiGe contacting a lower surface of the phase-changematerial layer.
 4. The embedded phase-change memory of claim 1, whereinthe phase-change memory device comprises: a phase-change material layerwhich is changed reversibly between an amorphous state and to acrystalline state by a current; and a heating layer contacting a lowersurface of the phase-change material layer and composed of at least onematerial selected from the group consisting of W, Ti, TiW, TiN, TiAIN,Ta and a combination of these materials.
 5. The embedded phase-changememory of claim 1, wherein the phase-change memory device is formed onan insulating layer on the substrate outside the bipolar transistor andthe MOS transistor.
 6. The embedded phase-change memory of claim 1,wherein the phase-change memory device is formed in a well in an upperportion of the substrate outside the bipolar transistor and the MOStransistor.
 7. A method of fabricating an embedded phase-change memory,comprising: forming a collector and a collector connection layer of abipolar transistor, and a well of a MOS transistor, in a substrate;forming an insulating layer on the substrate outside the bipolartransistor and the MOS transistor; forming a gate insulating layer onthe collector, the collector connection layer, and the well; forming agate electrode on the gate insulating layer over the well to form theMOS transistor; removing the gate insulating layer on the collector andthe collector connection layer; forming a base composed of SiGe on thecollector where the gate insulating layer was removed; and forming anemitter electrode on the base, and a collector electrode on thecollector connection layer, to form the bipolar transistor.
 8. Themethod of claim 7, further comprising forming a heating layer composedof SiGe on the insulating layer simultaneously with forming the basecomposed of SiGe.
 9. The method of claim 8, further comprising forming aphase-change memory device by forming a phase-change material layercontacting the heating layer.
 10. The method of claim 7, wherein theforming of the base comprises: forming a SiGe layer to a uniformthickness on the entire surface of the substrate including the collectorfrom which the gate insulating layer was removed; and patterning theSiGe layer to remain on an upper surface of the collector and a portionof the substrate adjacent to the collector.
 11. The method of claim 8,wherein the simultaneous forming of the base and the heating layercomprises: depositing the SiGe layer to a uniform thickness on theentire surface of the substrate including the collector where the gateinsulating layer was removed; and patterning the SiGe layer to remain onthe upper surface of the collector, a portion of the substrate adjacentto the collector, and the insulating layer.
 12. The method of either oneof claims 10 and 11, comprising doping an impurity simultaneously withdepositing the SiGe layer.
 13. The method of claim 7, after forming thebipolar transistor, further comprising: forming a heating layer on theinsulating layer, the heating layer composed of at least one materialselected from the group consisting of SiGe, W, Ti, TiW, TiN, TiAIN, Taand a combination of these materials; and forming a phase-changematerial layer contacting the heating layer.
 14. The method of claim 9,after forming the phase-change memory device, further comprisingelectrically connecting the phase-change memory to the MOS transistor.15. The method of claim 9, after forming the phase-change memory device,further comprising electrically connecting the phase-change memorydevice to the bipolar transistor.